Vishay Siliconix SIR450DP-T1-RE3
Product Information
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 10A, 10V
Detailed Description:
N-Channel 45V 36A (Ta), 113A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds:
5920pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Series:
TrenchFET® Gen IV
Vgs (Max):
+20V, -16V
Gate Charge (Qg) (Max) @ Vgs:
114nC @ 10V
Supplier Device Package:
PowerPAK® SO-8
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
PowerPAK® SO-8
Power Dissipation (Max):
4.8W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss):
45V
Current - Continuous Drain (Id) @ 25°C:
36A (Ta), 113A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Vishay Siliconix
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FAQs
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You can order Vishay Siliconix brand products with SIR450DP-T1-RE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIR450DP-T1-RE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIR450DP-T1-RE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21207647 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21207647.
Yes. We ship SIR450DP-T1-RE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SIR450DP-T1-RE3. It has a maximum Rds On and voltage of 1.8mohm @ 10a, 10v. It features n-channel 45v 36a (ta), 113a (tc) 4.8w (ta), 48w (tc) surface mount powerpak® so-8. The product's input capacitance at maximum includes 5920pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. The product trenchfet® gen iv, is a highly preferred choice for users. The maximum Vgs rate is +20v, -16v. The maximum gate charge and given voltages include 114nc @ 10v. powerpak® so-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in powerpak® so-8. The product carries maximum power dissipation 4.8w (ta), 48w (tc). The product has a 45v drain to source voltage. The continuous current drain at 25°C is 36a (ta), 113a (tc). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
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