Toshiba Semiconductor and Storage TPCC8136.LQ
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Operating Temperature:
150°C
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 5 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 9.4A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2350 pF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C:
9.4A (Ta)
Power Dissipation (Max):
700mW (Ta), 18W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPCC8136
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPCC8136.LQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPCC8136.LQ.
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Yes. We ship TPCC8136.LQ Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCC8136.LQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.2v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in 8-powervdfn. The maximum gate charge and given voltages include 36 nc @ 5 v. It has a maximum Rds On and voltage of 16mohm @ 9.4a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2350 pf @ 10 v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. 8-tson advance (3.1x3.1) is the supplier device package value. The continuous current drain at 25°C is 9.4a (ta). The product carries maximum power dissipation 700mw (ta), 18w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpcc8136, a base product number of the product. The product is designated with the ear99 code number.
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