Toshiba Semiconductor and Storage TK12J60W,S1VE(S
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.7V @ 600µA
Operating Temperature:
150°C
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Rds On (Max) @ Id, Vgs:
300mOhm @ 5.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tray
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
890 pF @ 300 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(N)
Current - Continuous Drain (Id) @ 25°C:
11.5A (Ta)
Power Dissipation (Max):
110W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK12J60
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK12J60W,S1VE(S. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.7v @ 600µa. The product has 150°c operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. The maximum gate charge and given voltages include 25 nc @ 10 v. It has a maximum Rds On and voltage of 300mohm @ 5.8a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tray package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 890 pf @ 300 v. The product is available in through hole configuration. to-3p(n) is the supplier device package value. The continuous current drain at 25°C is 11.5a (ta). The product carries maximum power dissipation 110w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk12j60, a base product number of the product. The product is designated with the ear99 code number.
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