Microchip Technology APT5020BN
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
200mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs:
210 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
360W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3500 pF @ 25 V
Mounting Type:
Through Hole
Series:
POWER MOS IV®
Supplier Device Package:
TO-247AD
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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Yes. We ship APT5020BN Internationally to many countries around the world.
This is manufactured by Microchip Technology. The manufacturer part number is APT5020BN. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 200mohm @ 14a, 10v. The maximum gate charge and given voltages include 210 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 360w (tc). The product's input capacitance at maximum includes 3500 pf @ 25 v. The product is available in through hole configuration. The product power mos iv®, is a highly preferred choice for users. to-247ad is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 28a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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