Microchip Technology APT1003RKLLG
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
3Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
139W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
694 pF @ 25 V
Mounting Type:
Through Hole
Series:
POWER MOS 7®
Supplier Device Package:
TO-220 [K]
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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Yes. We ship APT1003RKLLG Internationally to many countries around the world.
This is manufactured by Microchip Technology. The manufacturer part number is APT1003RKLLG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 34 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 3ohm @ 2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 1000 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 139w (tc). The product's input capacitance at maximum includes 694 pf @ 25 v. The product is available in through hole configuration. The product power mos 7®, is a highly preferred choice for users. to-220 [k] is the supplier device package value. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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