Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ
Product Information
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 500µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
1.14mOhm @ 60A, 10V
edacadModel:
TPH1R104PB,L1XHQ Models
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/12155001
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
960mW (Ta), 132W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4560 pF @ 10 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-SOP Advance (5x5)
Current - Continuous Drain (Id) @ 25°C:
120A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPH1R104
ECCN:
EAR99
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FAQs
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Yes. We ship TPH1R104PB,L1XHQ Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH1R104PB,L1XHQ. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 500µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 1.14mohm @ 60a, 10v. The maximum gate charge and given voltages include 55 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 960mw (ta), 132w (tc). The product's input capacitance at maximum includes 4560 pf @ 10 v. It has a long 52 weeks standard lead time. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-sop advance (5x5) is the supplier device package value. The continuous current drain at 25°C is 120a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tph1r104, a base product number of the product. The product is designated with the ear99 code number.
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