Microsemi Corporation APT1002RBNG
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1800 pF @ 25 V
Mounting Type:
Through Hole
Series:
POWER MOS IV®
Supplier Device Package:
TO-247AD
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
240W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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You can order Microsemi Corporation brand products with APT1002RBNG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation APT1002RBNG. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation APT1002RBNG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19564990 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19564990.
Yes. We ship APT1002RBNG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT1002RBNG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. The maximum gate charge and given voltages include 105 nc @ 10 v. It has a maximum Rds On and voltage of 1.6ohm @ 4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 1000 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1800 pf @ 25 v. The product is available in through hole configuration. The product power mos iv®, is a highly preferred choice for users. to-247ad is the supplier device package value. The continuous current drain at 25°C is 8a (tc). The product carries maximum power dissipation 240w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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