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Vishay Siliconix SIHB105N60EF-GE3

SIHB105N60EF-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 600V 29A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
SIHB105
Gate Charge (Qg) (Max) @ Vgs:
53nC @ 10V
Rds On (Max) @ Id, Vgs:
102mOhm @ 13A, 10V
FET Type:
N-Channel
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1804pF @ 100V
Mounting Type:
Surface Mount
Series:
EF
Supplier Device Package:
D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Power Dissipation (Max):
208W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHB105N60EF-GE3. It has typical 14 weeks of manufacturer standard lead time. It features n-channel 600v 29a (tc) 208w (tc) surface mount d²pak (to-263). The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: sihb105. The maximum gate charge and given voltages include 53nc @ 10v. It has a maximum Rds On and voltage of 102mohm @ 13a, 10v. It carries FET type n-channel. The vishay siliconix's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1804pf @ 100v. The product is available in surface mount configuration. The product ef, is a highly preferred choice for users. d²pak (to-263) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 29a (tc). The product carries maximum power dissipation 208w (tc). This product use mosfet (metal oxide) technology.

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SIHB105N60EF(Datasheets)

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FAQs

Yes. You can also search SIHB105N60EF-GE3 on website for other similar products.
We accept all major payment methods for all products including ET19490012. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIHB105N60EF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIHB105N60EF-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIHB105N60EF-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19490012 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19490012.
Yes. We ship SIHB105N60EF-GE3 Internationally to many countries around the world.