FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
10Ohm @ 500mA, 10V
title:
STH2N120K5-2AG
Vgs(th) (Max) @ Id:
4V @ 100µA
REACH Status:
REACH Unaffected
edacadModel:
STH2N120K5-2AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/11590955
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
60W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
124 pF @ 100 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
5.3 nC @ 10 V
Supplier Device Package:
H2PAK-2
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH2N120
ECCN:
EAR99
Automotive Standard:
No
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
1200V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
5.3nC
Series:
MDmesh K5
Maximum Gate Source Voltage Vgs:
±30 V
Forward Voltage Vf:
1.5V
Height:
4.7mm
Width:
10.4 mm
Length:
15.8mm
Package Type:
H2PAK-2
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
10Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
1.5A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
