STMicroelectronics SCT30N120D2
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 20 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
100mOhm @ 20A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tray
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 400 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
HiP247™
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
270W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT30
ECCN:
EAR99
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FAQs
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Yes. We ship SCT30N120D2 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is SCT30N120D2. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. The maximum gate charge and given voltages include 105 nc @ 20 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 100mohm @ 20a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tray package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. The product's input capacitance at maximum includes 1700 pf @ 400 v. The product is available in through hole configuration. hip247™ is the supplier device package value. The continuous current drain at 25°C is 40a (tc). The product carries maximum power dissipation 270w (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sct30, a base product number of the product. The product is designated with the ear99 code number.
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