Vishay Siliconix SISH108DN-T1-GE3
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8SH
Rds On (Max) @ Id, Vgs:
4.9mOhm @ 22A, 10V
edacadModel:
SISH108DN-T1-GE3 Models
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/9760596
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.5W (Ta)
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen II
Supplier Device Package:
PowerPAK® 1212-8SH
Current - Continuous Drain (Id) @ 25°C:
14A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISH108
ECCN:
EAR99
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FAQs
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We accept all major payment methods for all products including ET18200311. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SISH108DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISH108DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISH108DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18200311 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18200311.
Yes. We ship SISH108DN-T1-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SISH108DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8sh. It has a maximum Rds On and voltage of 4.9mohm @ 22a, 10v. The maximum gate charge and given voltages include 30 nc @ 4.5 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.5w (ta). It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen ii, is a highly preferred choice for users. powerpak® 1212-8sh is the supplier device package value. The continuous current drain at 25°C is 14a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sish108, a base product number of the product. The product is designated with the ear99 code number.
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