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STMicroelectronics STF26N60DM6

STF26N60DM6 STMicroelectronics
STMicroelectronics

Product Information

Typical Gate Charge @ Vgs:
24 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
30 W
Maximum Gate Source Voltage:
±25 V
Maximum Gate Threshold Voltage:
4.75V
Height:
16.4mm
Width:
4.6mm
Length:
10.4mm
Maximum Drain Source Resistance:
195 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Minimum Gate Threshold Voltage:
3.25V
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
195mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs(th) (Max) @ Id:
4.75V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STF26N60DM6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9950627
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
30W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
940 pF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™ DM6
Supplier Device Package:
TO-220FP
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF26
ECCN:
EAR99
RoHs Compliant
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This is manufactured by STMicroelectronics. The manufacturer part number is STF26N60DM6. With a typical gate charge at Vgs includes 24 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 30 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. The product carries 4.75v of maximum gate threshold voltage. In addition, the height is 16.4mm. Furthermore, the product is 4.6mm wide. Its accurate length is 10.4mm. It provides up to 195 mω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3.25v. Its forward diode voltage is 1.6v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 195mohm @ 9a, 10v. The maximum gate charge and given voltages include 24 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 30w (tc). It has a long 14 weeks standard lead time. The product's input capacitance at maximum includes 940 pf @ 100 v. The product mdmesh™ dm6, is a highly preferred choice for users. to-220fp is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 18a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stf26, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet STF26N60DM6(Technical Reference)
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Datasheet - STF26N60DM6(Technical Reference)
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Mult Dev Assembly Site 02/Apr/2024(PCN Assembly/Origin)
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STF26N60DM6 Datasheet(Datasheets)

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Yes. We ship STF26N60DM6 Internationally to many countries around the world.