Vishay Siliconix SISH112DN-T1-GE3
Product Information
Detailed Description:
N-Channel 30V 11.3A (Tc) 1.5W (Tc) Surface Mount PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8SH
Base Part Number:
SISH112
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 4.5V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 17.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2610pF @ 15V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8SH
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11.3A (Tc)
Customer Reference:
Power Dissipation (Max):
1.5W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
Yes. You can also search SISH112DN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET17518335. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SISH112DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISH112DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISH112DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17518335 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET17518335.
Yes. We ship SISH112DN-T1-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SISH112DN-T1-GE3. It features n-channel 30v 11.3a (tc) 1.5w (tc) surface mount powerpak® 1212-8sh. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -50°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8sh. Base Part Number: sish112. The maximum gate charge and given voltages include 27nc @ 4.5v. It has a maximum Rds On and voltage of 7.5mohm @ 17.8a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 2610pf @ 15v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® 1212-8sh is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 11.3a (tc). The product carries maximum power dissipation 1.5w (tc). This product use mosfet (metal oxide) technology.
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