NXP USA Inc. SI4800,518
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
18.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs:
11.8 nC @ 5 V
Vgs(th) (Max) @ Id:
800mV @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
2 (1 Year)
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
8-SO
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4
ECCN:
EAR99
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FAQs
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You can order NXP USA Inc. brand products with SI4800,518 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP USA Inc. SI4800,518. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. SI4800,518.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17485637 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET17485637.
Yes. We ship SI4800,518 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is SI4800,518. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 18.5mohm @ 9a, 10v. The maximum gate charge and given voltages include 11.8 nc @ 5 v. The typical Vgs (th) (max) of the product is 800mv @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 2 (1 year). The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 8-so is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 9a (ta). The product carries maximum power dissipation 2.5w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si4, a base product number of the product. The product is designated with the ear99 code number.
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