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NXP USA Inc. PHD110NQ03LT,118

PHD110NQ03LT-118 NXP USA Inc. PHD110NQ03LT,118
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
26.7 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
115W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2200 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHD11
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PHD110NQ03LT,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 4.6mohm @ 25a, 10v. The maximum gate charge and given voltages include 26.7 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in tape & reel (tr) package . The product has a 25 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 115w (tc). The product's input capacitance at maximum includes 2200 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. dpak is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to phd11, a base product number of the product. The product is designated with the ear99 code number.

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PHD110NQ03LT(Datasheets)
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NXP USA Inc REACH(Environmental Information)
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NXP USA Inc RoHS Cert(Environmental Information)
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All Dev Label Update 15/Dec/2020(PCN Packaging)

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You will get a confirmation email regarding your order of NXP USA Inc. PHD110NQ03LT,118. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. PHD110NQ03LT,118.
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