Taiwan Semiconductor Corporation TSM70N750CP ROG
Product Information
Base Part Number:
TSM70
Detailed Description:
N-Channel 700V 6A (Tc) 62.5W (Tc) Surface Mount TO-252, (D-Pak)
Input Capacitance (Ciss) (Max) @ Vds:
555pF @ 100V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
700V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
10.7nC @ 10V
Rds On (Max) @ Id, Vgs:
750mOhm @ 1.8A, 10V
Supplier Device Package:
TO-252, (D-Pak)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
62.5W (Tc)
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Taiwan Semiconductor Corporation
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship TSM70N750CP ROG Internationally to many countries around the world.
This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM70N750CP ROG. Base Part Number: tsm70. It features n-channel 700v 6a (tc) 62.5w (tc) surface mount to-252, (d-pak). The product's input capacitance at maximum includes 555pf @ 100v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 700v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 10.7nc @ 10v. It has a maximum Rds On and voltage of 750mohm @ 1.8a, 10v. to-252, (d-pak) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 62.5w (tc). The continuous current drain at 25°C is 6a (tc). This product use mosfet (metal oxide) technology. The taiwan semiconductor corporation's product offers user-desired applications.
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