Microsemi Corporation JANTX2N6768
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-204AE
Rds On (Max) @ Id, Vgs:
400mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
400 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
4W (Ta), 150W (Tc)
Qualification:
MIL-PRF-19500/543
Mounting Type:
Through Hole
Grade:
Military
Series:
-
Supplier Device Package:
TO-3
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. We ship JANTX2N6768 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N6768. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-204ae. It has a maximum Rds On and voltage of 400mohm @ 14a, 10v. The maximum gate charge and given voltages include 110 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 400 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 4w (ta), 150w (tc). The product is available in through hole configuration. The product is military, a grade of class. to-3 is the supplier device package value. The continuous current drain at 25°C is 14a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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