Microsemi Corporation APT5012JN
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 2.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
120mOhm @ 21.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
370 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6500 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
POWER MOS IV®
Supplier Device Package:
ISOTOP®
Packaging:
Tray
Current - Continuous Drain (Id) @ 25°C:
43A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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We accept all major payment methods for all products including ET16025144. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with APT5012JN directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation APT5012JN. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation APT5012JN.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16025144 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16025144.
Yes. We ship APT5012JN Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT5012JN. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 2.5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-227-4, minibloc. It has a maximum Rds On and voltage of 120mohm @ 21.5a, 10v. The maximum gate charge and given voltages include 370 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 520w (tc). The product's input capacitance at maximum includes 6500 pf @ 25 v. The product is available in chassis mount configuration. The product power mos iv®, is a highly preferred choice for users. isotop® is the supplier device package value. In addition, tray is the available packaging type of the product. The continuous current drain at 25°C is 43a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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