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Microsemi Corporation APT17N80BC3G

APT17N80BC3G Microsemi Corporation
Microsemi Corporation

Product Information

Rds On (Max) @ Id, Vgs:
290mOhm @ 11A, 10V
Detailed Description:
N-Channel 800V 17A (Tc) 208W (Tc) Through Hole TO-247-3
Input Capacitance (Ciss) (Max) @ Vds:
2250pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3.9V @ 1mA
Series:
CoolMOS™
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
90nC @ 10V
Supplier Device Package:
TO-247-3
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-3
Power Dissipation (Max):
208W (Tc)
Drain to Source Voltage (Vdss):
800V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT17N80BC3G. It has a maximum Rds On and voltage of 290mohm @ 11a, 10v. It features n-channel 800v 17a (tc) 208w (tc) through hole to-247-3. The product's input capacitance at maximum includes 2250pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3.9v @ 1ma. The product coolmos™, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 90nc @ 10v. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 208w (tc). The product has a 800v drain to source voltage. The continuous current drain at 25°C is 17a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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APT17N80(B,S)C3(Datasheets)

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