Infineon Technologies SPI10N10L
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 21µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
154mOhm @ 8.1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
444 pF @ 25 V
Mounting Type:
Through Hole
Series:
SIPMOS®
Supplier Device Package:
PG-TO262-3-1
Current - Continuous Drain (Id) @ 25°C:
10.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SPI10N
ECCN:
EAR99
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FAQs
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We accept all major payment methods for all products including ET15885737. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with SPI10N10L directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies SPI10N10L. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies SPI10N10L.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET15885737 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET15885737.
Yes. We ship SPI10N10L Internationally to many countries around the world.
This is manufactured by Infineon Technologies. The manufacturer part number is SPI10N10L. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 21µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 22 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 154mohm @ 8.1a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 50w (tc). The product's input capacitance at maximum includes 444 pf @ 25 v. The product is available in through hole configuration. The product sipmos®, is a highly preferred choice for users. pg-to262-3-1 is the supplier device package value. The continuous current drain at 25°C is 10.3a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to spi10n, a base product number of the product. The product is designated with the ear99 code number.
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