Infineon Technologies IRFSL59N10D
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
25mOhm @ 35.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
114 nC @ 10 V
Vgs(th) (Max) @ Id:
5.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2450 pF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-262
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
59A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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You can order Infineon Technologies brand products with IRFSL59N10D directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IRFSL59N10D. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IRFSL59N10D.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET15883009 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET15883009.
Yes. We ship IRFSL59N10D Internationally to many countries around the world.
This is manufactured by Infineon Technologies. The manufacturer part number is IRFSL59N10D. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 25mohm @ 35.4a, 10v. The maximum gate charge and given voltages include 114 nc @ 10 v. The typical Vgs (th) (max) of the product is 5.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.8w (ta), 200w (tc). The product's input capacitance at maximum includes 2450 pf @ 25 v. The product is available in through hole configuration. The product hexfet®, is a highly preferred choice for users. to-262 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 59a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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