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Infineon Technologies BSC16DN25NS3GATMA1

BSC16DN25NS3GATMA1 Infineon Technologies
Infineon Technologies

Product Information

Detailed Description:
N-Channel 250V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TDSON-8-5
Vgs(th) (Max) @ Id:
4V @ 32µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
BSC16DN25
Gate Charge (Qg) (Max) @ Vgs:
11.4nC @ 10V
Rds On (Max) @ Id, Vgs:
165mOhm @ 5.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
920pF @ 100V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TDSON-8-5
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10.9A (Tc)
Customer Reference:
Power Dissipation (Max):
62.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is BSC16DN25NS3GATMA1. It features n-channel 250v 10.9a (tc) 62.5w (tc) surface mount pg-tdson-8-5. The typical Vgs (th) (max) of the product is 4v @ 32µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: bsc16dn25. The maximum gate charge and given voltages include 11.4nc @ 10v. It has a maximum Rds On and voltage of 165mohm @ 5.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The infineon technologies's product offers user-desired applications. The product has a 250v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 920pf @ 100v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. pg-tdson-8-5 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10.9a (tc). The product carries maximum power dissipation 62.5w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Material Chgs 22/Dec/2020(PCN Design/Specification)
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Mult Dev Reel Design Chg 2/Dec/2019(PCN Packaging)
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Mult Dev Pkg Box Chg 3/Jan/2018(PCN Packaging)
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Part Number Guide(Other Related Documents)

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FAQs

Yes. You can also search BSC16DN25NS3GATMA1 on website for other similar products.
We accept all major payment methods for all products including ET15877684. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with BSC16DN25NS3GATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies BSC16DN25NS3GATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies BSC16DN25NS3GATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET15877684 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET15877684.
Yes. We ship BSC16DN25NS3GATMA1 Internationally to many countries around the world.