Toshiba Semiconductor and Storage TPN2R805PL,L1Q
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Vgs(th) (Max) @ Id:
2.4V @ 300µA
edacadModel:
TPN2R805PL,L1Q Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/7809863
Drain to Source Voltage (Vdss):
45 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.67W (Ta), 104W (Tc)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3200 pF @ 22.5 V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPN2R805
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN2R805PL,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 2.8mohm @ 40a, 10v. The maximum gate charge and given voltages include 39 nc @ 10 v. The typical Vgs (th) (max) of the product is 2.4v @ 300µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 45 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.67w (ta), 104w (tc). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 3200 pf @ 22.5 v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-tson advance (3.1x3.1) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpn2r805, a base product number of the product. The product is designated with the ear99 code number.
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