Toshiba Semiconductor and Storage TK8P60W,RVQ
Product Information
FET Feature:
Super Junction
Detailed Description:
N-Channel 600V 8A (Ta) 80W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
3.7V @ 400µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
TK8P60
Gate Charge (Qg) (Max) @ Vgs:
18.5nC @ 10V
Rds On (Max) @ Id, Vgs:
500mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
570pF @ 300V
Mounting Type:
Surface Mount
Series:
DTMOSIV
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Customer Reference:
Power Dissipation (Max):
80W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship TK8P60W,RVQ Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK8P60W,RVQ. The FET features of the product include super junction. It features n-channel 600v 8a (ta) 80w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 3.7v @ 400µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: tk8p60. The maximum gate charge and given voltages include 18.5nc @ 10v. It has a maximum Rds On and voltage of 500mohm @ 4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 570pf @ 300v. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8a (ta). The product carries maximum power dissipation 80w (tc). This product use mosfet (metal oxide) technology.
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