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Toshiba Semiconductor and Storage TK3R1P04PL,RQ

TK3R1P04PL-RQ Toshiba Semiconductor and Storage TK3R1P04PL,RQ
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 40V 58A (Tc) 87W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2.4V @ 500µA
Operating Temperature:
175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
TK3R1P04
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 10V
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 29A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4670pF @ 20V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Customer Reference:
Power Dissipation (Max):
87W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK3R1P04PL,RQ. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 40v 58a (tc) 87w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 2.4v @ 500µa. The product has 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: tk3r1p04. The maximum gate charge and given voltages include 60nc @ 10v. It has a maximum Rds On and voltage of 3.1mohm @ 29a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4670pf @ 20v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 58a (tc). The product carries maximum power dissipation 87w (tc). This product use mosfet (metal oxide) technology.

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FAQs

Yes. You can also search TK3R1P04PL,RQ on website for other similar products.
We accept all major payment methods for all products including ET14929328. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TK3R1P04PL,RQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK3R1P04PL,RQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK3R1P04PL,RQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14929328 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14929328.
Yes. We ship TK3R1P04PL,RQ Internationally to many countries around the world.