Toshiba Semiconductor and Storage TK380P65Y,RQ
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 650V 9.7A (Tc) 80W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
4V @ 360µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
TK380P65
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Rds On (Max) @ Id, Vgs:
380mOhm @ 4.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
590pF @ 300V
Mounting Type:
Surface Mount
Series:
DTMOSV
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.7A (Tc)
Customer Reference:
Power Dissipation (Max):
80W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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You can order Toshiba Semiconductor and Storage brand products with TK380P65Y,RQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK380P65Y,RQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK380P65Y,RQ.
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Yes. We ship TK380P65Y,RQ Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK380P65Y,RQ. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 650v 9.7a (tc) 80w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 4v @ 360µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: tk380p65. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 380mohm @ 4.9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 590pf @ 300v. The product is available in surface mount configuration. The product dtmosv, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9.7a (tc). The product carries maximum power dissipation 80w (tc). This product use mosfet (metal oxide) technology.
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