Toshiba Semiconductor and Storage TK1K9A60F,S4X
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
1.9Ohm @ 1.9A, 10V
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 400µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
30W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 300 V
Mounting Type:
Through Hole
Series:
U-MOSIX
Supplier Device Package:
TO-220SIS
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
3.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK1K9A60
ECCN:
EAR99
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FAQs
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You can order Toshiba Semiconductor and Storage brand products with TK1K9A60F,S4X directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK1K9A60F,S4X. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK1K9A60F,S4X.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14929316 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14929316.
Yes. We ship TK1K9A60F,S4X Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK1K9A60F,S4X. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 1.9ohm @ 1.9a, 10v. The maximum gate charge and given voltages include 14 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 400µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 30w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 490 pf @ 300 v. The product is available in through hole configuration. The product u-mosix, is a highly preferred choice for users. to-220sis is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 3.7a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk1k9a60, a base product number of the product. The product is designated with the ear99 code number.
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