Toshiba Semiconductor and Storage TK10V60W,LVQ
Product Information
FET Feature:
Super Junction
Detailed Description:
N-Channel 600V 9.7A (Ta) 88.3W (Tc) Surface Mount 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id:
3.7V @ 500µA
Operating Temperature:
150°C (TJ)
Package / Case:
4-VSFN Exposed Pad
Base Part Number:
TK10V60
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Rds On (Max) @ Id, Vgs:
380mOhm @ 4.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
700pF @ 300V
Mounting Type:
Surface Mount
Series:
DTMOSIV
Supplier Device Package:
4-DFN-EP (8x8)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.7A (Ta)
Customer Reference:
Power Dissipation (Max):
88.3W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship TK10V60W,LVQ Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK10V60W,LVQ. The FET features of the product include super junction. It features n-channel 600v 9.7a (ta) 88.3w (tc) surface mount 4-dfn-ep (8x8). The typical Vgs (th) (max) of the product is 3.7v @ 500µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 4-vsfn exposed pad. Base Part Number: tk10v60. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 380mohm @ 4.9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 700pf @ 300v. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. 4-dfn-ep (8x8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9.7a (ta). The product carries maximum power dissipation 88.3w (tc). This product use mosfet (metal oxide) technology.
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