Toshiba Semiconductor and Storage SSM6J409TU(TE85L,F
Product Information
Detailed Description:
P-Channel 20V 9.5A (Ta) 1W (Ta) Surface Mount UF6
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
6-SMD, Flat Leads
Base Part Number:
TLP161
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 4.5V
Rds On (Max) @ Id, Vgs:
22.1mOhm @ 3A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSV
Supplier Device Package:
UF6
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.5A (Ta)
Customer Reference:
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6J409TU(TE85L,F. It features p-channel 20v 9.5a (ta) 1w (ta) surface mount uf6. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-smd, flat leads. Base Part Number: tlp161. The maximum gate charge and given voltages include 15nc @ 4.5v. It has a maximum Rds On and voltage of 22.1mohm @ 3a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 1100pf @ 10v. The product is available in surface mount configuration. The product u-mosv, is a highly preferred choice for users. uf6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9.5a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology.
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