Toshiba Semiconductor and Storage SSM3K303T(TE85L,F)
Product Information
Detailed Description:
N-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount TSM
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
TA78L012
Gate Charge (Qg) (Max) @ Vgs:
3.3nC @ 4V
Rds On (Max) @ Id, Vgs:
83mOhm @ 1.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
180pF @ 10V
Mounting Type:
Surface Mount
Series:
π-MOSVII
Supplier Device Package:
TSM
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.9A (Ta)
Customer Reference:
Power Dissipation (Max):
700mW (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship SSM3K303T(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K303T(TE85L,F). It features n-channel 30v 2.9a (ta) 700mw (ta) surface mount tsm. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: ta78l012. The maximum gate charge and given voltages include 3.3nc @ 4v. It has a maximum Rds On and voltage of 83mohm @ 1.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 180pf @ 10v. The product is available in surface mount configuration. The product π-mosvii, is a highly preferred choice for users. tsm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.9a (ta). The product carries maximum power dissipation 700mw (ta). This product use mosfet (metal oxide) technology.
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