Toshiba Semiconductor and Storage SSM3J112TU,LF
Product Information
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C
Package / Case:
3-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
390mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:
1.8V @ 100µA
edacadModel:
SSM3J112TU,LF Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
edacadModelUrl:
/en/models/7809540
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
800mW (Ta)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
86 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
UFM
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J112
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage SSM3J112TU,LF. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage SSM3J112TU,LF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14928511 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14928511.
Yes. We ship SSM3J112TU,LF Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J112TU,LF. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has 150°c operating temperature range. Moreover, the product comes in 3-smd, flat leads. It has a maximum Rds On and voltage of 390mohm @ 500ma, 10v. The typical Vgs (th) (max) of the product is 1.8v @ 100µa. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 800mw (ta). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 86 pf @ 15 v. The product is available in surface mount configuration. ufm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 1.1a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j112, a base product number of the product. The product is designated with the ear99 code number.
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