Toshiba Semiconductor and Storage 2SK2916(F)
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
Rds On (Max) @ Id, Vgs:
400mOhm @ 7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2600 pF @ 10 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(N)IS
Current - Continuous Drain (Id) @ 25°C:
14A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2SK2916
ECCN:
EAR99
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Yes. We ship 2SK2916(F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SK2916(F). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. The maximum gate charge and given voltages include 58 nc @ 10 v. It has a maximum Rds On and voltage of 400mohm @ 7a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 80w (tc). The product's input capacitance at maximum includes 2600 pf @ 10 v. The product is available in through hole configuration. to-3p(n)is is the supplier device package value. The continuous current drain at 25°C is 14a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2sk2916, a base product number of the product. The product is designated with the ear99 code number.
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