Vishay Siliconix SQ3419EEV-T1-GE3
Product Information
Detailed Description:
P-Channel 40V 7.4A (Tc) 5W (Tc) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
SQ3419
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 4.5V
Rds On (Max) @ Id, Vgs:
50mOhm @ 2.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
1065pF @ 20V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7.4A (Tc)
Customer Reference:
Power Dissipation (Max):
5W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Vishay Siliconix. The manufacturer part number is SQ3419EEV-T1-GE3. It features p-channel 40v 7.4a (tc) 5w (tc) surface mount 6-tsop. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: sq3419. The maximum gate charge and given voltages include 15nc @ 4.5v. It has a maximum Rds On and voltage of 50mohm @ 2.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 1065pf @ 20v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7.4a (tc). The product carries maximum power dissipation 5w (tc). This product use mosfet (metal oxide) technology.
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