Vishay Siliconix SI1051X-T1-GE3
Product Information
Detailed Description:
P-Channel 8V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89-6
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Base Part Number:
SI1051
Gate Charge (Qg) (Max) @ Vgs:
9.45nC @ 5V
Rds On (Max) @ Id, Vgs:
122mOhm @ 1.2A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
8V
Vgs (Max):
±5V
Input Capacitance (Ciss) (Max) @ Vds:
560pF @ 4V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SC-89-6
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Customer Reference:
Power Dissipation (Max):
236mW (Ta)
Technology:
MOSFET (Metal Oxide)
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FAQs
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You will get a confirmation email regarding your order of Vishay Siliconix SI1051X-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI1051X-T1-GE3.
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Yes. We ship SI1051X-T1-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SI1051X-T1-GE3. It features p-channel 8v 1.2a (ta) 236mw (ta) surface mount sc-89-6. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. Base Part Number: si1051. The maximum gate charge and given voltages include 9.45nc @ 5v. It has a maximum Rds On and voltage of 122mohm @ 1.2a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The vishay siliconix's product offers user-desired applications. The product has a 8v drain to source voltage. The maximum Vgs rate is ±5v. The product's input capacitance at maximum includes 560pf @ 4v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sc-89-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.2a (ta). The product carries maximum power dissipation 236mw (ta). This product use mosfet (metal oxide) technology.
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