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STMicroelectronics STB18N55M5

STB18N55M5 STMicroelectronics
STB18N55M5
STB18N55M5
STMicroelectronics

Product Information

Category:
Power MOSFET
Dimensions:
10.75 x 10.4 x 4.6mm
Maximum Continuous Drain Current:
13 A
Transistor Material:
Si
Width:
10.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
550 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1352 pF@ 10 V
Length:
10.75mm
Pin Count:
3
Typical Turn-Off Delay Time:
29 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
90 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
25 V
Height:
4.6mm
Maximum Drain Source Resistance:
240 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
192mOhm @ 8A, 10V
edacadModel:
STB18N55M5 Models
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3317924
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
550 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1260 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB18N
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STB18N55M5. It is of power mosfet category . The given dimensions of the product include 10.75 x 10.4 x 4.6mm. While 13 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 10.4mm wide. The product offers single transistor configuration. It has a maximum of 550 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 31 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1352 pf@ 10 v . Its accurate length is 10.75mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 29 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 90 w maximum power dissipation. The product mdmesh m5, is a highly preferred choice for users. It features a maximum gate source voltage of 25 v. In addition, the height is 4.6mm. It provides up to 240 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 192mohm @ 8a, 10v. The maximum gate charge and given voltages include 31 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 550 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 110w (tc). The product's input capacitance at maximum includes 1260 pf @ 100 v. The product mdmesh™ v, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 16a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb18n, a base product number of the product. The product is designated with the ear99 code number.

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N-channel 550 V, 0.18 Ohm, 13 A, MDmesh(TM) V Power MOSFET in TO-220(Technical Reference)
pdf icon
IPG-PWR/14/8422 11/Apr/2014(PCN Design/Specification)
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D2PAK Lead Modification 04/Oct/2013(PCN Design/Specification)
pdf icon
IPD/15/9345 04/Aug/2015(PCN Obsolescence/ EOL)
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STB,D,F,P18N55M5(Datasheets)

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