This is manufactured by Vishay Siliconix. The manufacturer part number is SI4896DY-T1-E3. Base Part Number: si4896. It features n-channel 80v 6.7a (ta) 1.56w (ta) surface mount 8-so. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa (min). The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 41nc @ 10v. It has a maximum Rds On and voltage of 16.5mohm @ 10a, 10v. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 1.56w (ta). The product has a 80v drain to source voltage. The continuous current drain at 25°C is 6.7a (ta). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
SI4896DY(Datasheets)
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI4896DY-T1-E3. Base Part Number: si4896. It features n-channel 80v 6.7a (ta) 1.56w (ta) surface mount 8-so. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa (min). The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 41nc @ 10v. It has a maximum Rds On and voltage of 16.5mohm @ 10a, 10v. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 1.56w (ta). The product has a 80v drain to source voltage. The continuous current drain at 25°C is 6.7a (ta). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
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