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Vishay Siliconix SIR616DP-T1-GE3

SIR616DP-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Base Part Number:
SIR616
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 7.5V
Rds On (Max) @ Id, Vgs:
50.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1450pF @ 100V
Mounting Type:
Surface Mount
Series:
ThunderFET®
Supplier Device Package:
PowerPAK® SO-8
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20.2A (Tc)
Customer Reference:
Power Dissipation (Max):
52W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIR616DP-T1-GE3. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 200v 20.2a (tc) 52w (tc) surface mount powerpak® so-8. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. Base Part Number: sir616. The maximum gate charge and given voltages include 28nc @ 7.5v. It has a maximum Rds On and voltage of 50.5mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 7.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1450pf @ 100v. The product is available in surface mount configuration. The product thunderfet®, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 20.2a (tc). The product carries maximum power dissipation 52w (tc). This product use mosfet (metal oxide) technology.

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SIR616DP(Datasheets)

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FAQs

Yes. You can also search SIR616DP-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET12256518. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIR616DP-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIR616DP-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIR616DP-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12256518 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12256518.
Yes. We ship SIR616DP-T1-GE3 Internationally to many countries around the world.