FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3 Full Pack
Rds On (Max) @ Id, Vgs:
7Ohm @ 2A, 10V
title:
STFW4N150
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STFW4N150 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2136063
Drain to Source Voltage (Vdss):
1500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
63W (Tc)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 25 V
Mounting Type:
Through Hole
Series:
PowerMESH™
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Supplier Device Package:
TO-3PF
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STFW4
ECCN:
EAR99
Automotive Standard:
No
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
1500V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
29nC
Series:
STFW4
Maximum Gate Source Voltage Vgs:
±30 V
Forward Voltage Vf:
2V
Height:
44mm
Width:
15.7 mm
Length:
44mm
Package Type:
TO-3PF
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
6Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
4A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
