Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Toshiba Semiconductor and Storage TK16G60W,RVQ

Toshiba Semiconductor and Storage

Product Information

FET Feature:
Super Junction
Detailed Description:
N-Channel 600V 15.8A (Ta) 130W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
3.7V @ 790µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
TK16G60
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
190mOhm @ 7.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1350pF @ 300V
Mounting Type:
Surface Mount
Series:
DTMOSIV
Supplier Device Package:
D2PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
15.8A (Ta)
Customer Reference:
Power Dissipation (Max):
130W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK16G60W,RVQ. The FET features of the product include super junction. It features n-channel 600v 15.8a (ta) 130w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 3.7v @ 790µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: tk16g60. The maximum gate charge and given voltages include 38nc @ 10v. It has a maximum Rds On and voltage of 190mohm @ 7.9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1350pf @ 300v. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. d2pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 15.8a (ta). The product carries maximum power dissipation 130w (tc). This product use mosfet (metal oxide) technology.

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search TK16G60W,RVQ on website for other similar products.
We accept all major payment methods for all products including ET12070807. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TK16G60W,RVQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK16G60W,RVQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK16G60W,RVQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12070807 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12070807.
Yes. We ship TK16G60W,RVQ Internationally to many countries around the world.