Automotive Standard:
No
Maximum Power Dissipation Pd:
30W
Maximum Drain Source Voltage Vds:
60V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
STripFET II
Forward Voltage Vf:
1.3V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
12nC
Package Type:
TO-252
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
0.1Ω
Standards/Approvals:
RoHS Compliant
Maximum Continuous Drain Current Id:
12A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
100mOhm @ 6A, 10V
title:
STD12NF06T4
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STD12NF06T4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/654482
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
30W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
315 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™ II
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD12
ECCN:
EAR99
