Toshiba Semiconductor and Storage TPCC8002-H(TE12L,Q
Product Information
Detailed Description:
N-Channel 30V 22A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
TC7WH08
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 10V
Rds On (Max) @ Id, Vgs:
8.3mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2500pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSV-H
Supplier Device Package:
8-TSON Advance (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
22A (Ta)
Customer Reference:
Power Dissipation (Max):
700mW (Ta), 30W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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You can order Toshiba Semiconductor and Storage brand products with TPCC8002-H(TE12L,Q directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPCC8002-H(TE12L,Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPCC8002-H(TE12L,Q.
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Yes. We ship TPCC8002-H(TE12L,Q Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCC8002-H(TE12L,Q. It features n-channel 30v 22a (ta) 700mw (ta), 30w (tc) surface mount 8-tson advance (3.3x3.3). The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: tc7wh08. The maximum gate charge and given voltages include 27nc @ 10v. It has a maximum Rds On and voltage of 8.3mohm @ 11a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2500pf @ 10v. The product is available in surface mount configuration. The product u-mosv-h, is a highly preferred choice for users. 8-tson advance (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 22a (ta). The product carries maximum power dissipation 700mw (ta), 30w (tc). This product use mosfet (metal oxide) technology.
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