Automotive Standard:
No
Maximum Power Dissipation Pd:
100W
Maximum Drain Source Voltage Vds:
100V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
STripFET II
Forward Voltage Vf:
1.5V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
55nC
Package Type:
TO-252
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
38Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
25A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
38mOhm @ 12.5A, 10V
title:
STD25NF10T4
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STD25NF10T4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1039358
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
100W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1550 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™ II
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD25
ECCN:
EAR99
