Toshiba Semiconductor and Storage SSM3K301T(TE85L,F)
Product Information
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
4.8 nC @ 4 V
Rds On (Max) @ Id, Vgs:
56mOhm @ 2A, 4V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
320 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSM
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3K301
ECCN:
EAR99
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Yes. We ship SSM3K301T(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K301T(TE85L,F). It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 4.8 nc @ 4 v. It has a maximum Rds On and voltage of 56mohm @ 2a, 4v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta). The product's input capacitance at maximum includes 320 pf @ 10 v. The product is available in surface mount configuration. tsm is the supplier device package value. The continuous current drain at 25°C is 3.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3k301, a base product number of the product. The product is designated with the ear99 code number.
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