Category:
Small Signal
Dimensions:
4.9 x 3.91 x 1.58mm
Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Width:
3.91mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
15 V
Maximum Gate Threshold Voltage:
1.5V
Maximum Drain Source Resistance:
90 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+125 °C
Typical Gate Charge @ Vgs:
11.25 nC @ 10 V
Channel Type:
P
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
791 mW
Maximum Gate Source Voltage:
-15 V, +2 V
Height:
1.58mm
Typical Turn-On Delay Time:
6.5 ns
Minimum Operating Temperature:
-40 °C
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
11.25 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
TPS1101D Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
edacadModelUrl:
/en/models/372163
Package:
Tube
Drain to Source Voltage (Vdss):
15 V
Vgs (Max):
+2V, -15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
791mW (Ta)
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPS1101
ECCN:
EAR99
This is manufactured by Texas Instruments. The manufacturer part number is TPS1101D. It is of small signal category . The given dimensions of the product include 4.9 x 3.91 x 1.58mm. While 2.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.91mm wide. The product offers single transistor configuration. It has a maximum of 15 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. It provides up to 90 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +125 °c. With a typical gate charge at Vgs includes 11.25 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.9mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 19 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 791 mw maximum power dissipation. It features a maximum gate source voltage of -15 v, +2 v. In addition, the height is 1.58mm. In addition, it has a typical 6.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -40 °c. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 90mohm @ 2.5a, 10v. The maximum gate charge and given voltages include 11.25 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 10v. It is shipped in tube package . The product has a 15 v drain to source voltage. The maximum Vgs rate is +2v, -15v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 791mw (ta). It has a long 6 weeks standard lead time. 8-soic is the supplier device package value. The continuous current drain at 25°C is 2.3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tps1101, a base product number of the product. The product is designated with the ear99 code number.
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