Toshiba Semiconductor and Storage TPH2900ENH,L1Q
Product Information
Manufacturer Standard Lead Time:
32 Weeks
Detailed Description:
N-Channel 200V 33A (Ta) 78W (Tc) Surface Mount 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
TC7USB31
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
Rds On (Max) @ Id, Vgs:
29mOhm @ 16.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2200pF @ 100V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-SOP Advance (5x5)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
33A (Ta)
Customer Reference:
Power Dissipation (Max):
78W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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You can order Toshiba Semiconductor and Storage brand products with TPH2900ENH,L1Q directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPH2900ENH,L1Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPH2900ENH,L1Q.
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Yes. We ship TPH2900ENH,L1Q Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH2900ENH,L1Q. It has typical 32 weeks of manufacturer standard lead time. It features n-channel 200v 33a (ta) 78w (tc) surface mount 8-sop advance (5x5). The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: tc7usb31. The maximum gate charge and given voltages include 22nc @ 10v. It has a maximum Rds On and voltage of 29mohm @ 16.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2200pf @ 100v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-sop advance (5x5) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 33a (ta). The product carries maximum power dissipation 78w (tc). This product use mosfet (metal oxide) technology.
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