STMicroelectronics STB35NF10T4
Product Information
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
10.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
55 nC @ 10 V
Channel Type:
N
Length:
10.75mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
115 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
35 mΩ
Detailed Description:
N-Channel 100V 40A (Tc) 115W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STB35N
Gate Charge (Qg) (Max) @ Vgs:
55nC @ 10V
Rds On (Max) @ Id, Vgs:
35mOhm @ 17.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1550pF @ 25V
Mounting Type:
Surface Mount
Series:
STripFET™ II
Supplier Device Package:
D2PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Customer Reference:
Power Dissipation (Max):
115W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship STB35NF10T4 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STB35NF10T4. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 10.4mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 55 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.75mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 115 w maximum power dissipation. The product stripfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 35 mω maximum drain source resistance. It features n-channel 100v 40a (tc) 115w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: stb35n. The maximum gate charge and given voltages include 55nc @ 10v. It has a maximum Rds On and voltage of 35mohm @ 17.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1550pf @ 25v. The product stripfet™ ii, is a highly preferred choice for users. d2pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 40a (tc). The product carries maximum power dissipation 115w (tc). This product use mosfet (metal oxide) technology.
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