IXYS IXFT50N30Q3
Product Information
Category:
Power MOSFET
Dimensions:
16.05 x 14 x 5.1mm
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
14mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
300 V
Maximum Gate Threshold Voltage:
6.5V
Maximum Drain Source Resistance:
80 mΩ
Package Type:
TO-268
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
65 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3160 pF @ 25 V
Length:
16.05mm
Pin Count:
3
Typical Turn-Off Delay Time:
24 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
690 W
Series:
HiperFET, Q3-Class
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
5.1mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Rds On (Max) @ Id, Vgs:
80mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
65 nC @ 10 V
Vgs(th) (Max) @ Id:
6.5V @ 4mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
690W (Tc)
standardLeadTime:
44 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3165 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Q3 Class
Supplier Device Package:
TO-268AA
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFT50
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11743369 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11743369.
Yes. We ship IXFT50N30Q3 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFT50N30Q3. It is of power mosfet category . The given dimensions of the product include 16.05 x 14 x 5.1mm. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 14mm wide. The product offers single transistor configuration. It has a maximum of 300 v drain source voltage. The product carries 6.5v of maximum gate threshold voltage. It provides up to 80 mω maximum drain source resistance. The package is a sort of to-268. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3160 pf @ 25 v . Its accurate length is 16.05mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 24 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 690 w maximum power dissipation. The product hiperfet, q3-class, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 5.1mm. In addition, it has a typical 14 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-268-3, d3pak (2 leads + tab), to-268aa. It has a maximum Rds On and voltage of 80mohm @ 25a, 10v. The maximum gate charge and given voltages include 65 nc @ 10 v. The typical Vgs (th) (max) of the product is 6.5v @ 4ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 300 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 690w (tc). It has a long 44 weeks standard lead time. The product's input capacitance at maximum includes 3165 pf @ 25 v. The product hiperfet™, q3 class, is a highly preferred choice for users. to-268aa is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 50a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixft50, a base product number of the product. The product is designated with the ear99 code number.
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