Toshiba Semiconductor and Storage SSM3K56ACT,L3F
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SC-101, SOT-883
Base Part Number:
SSM3K56
Gate Charge (Qg) (Max) @ Vgs:
1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
235mOhm @ 800mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
55pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVII-H
Supplier Device Package:
CST3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship SSM3K56ACT,L3F Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K56ACT,L3F. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 20v 1.4a (ta) 500mw (ta) surface mount cst3. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-101, sot-883. Base Part Number: ssm3k56. The maximum gate charge and given voltages include 1nc @ 4.5v. It has a maximum Rds On and voltage of 235mohm @ 800ma, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 55pf @ 10v. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. cst3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.4a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology.
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