FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
1.8Ohm @ 1A, 10V
title:
STL3NM60N
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STL3NM60N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3681472
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Ta), 22W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
188 pF @ 50 V
Mounting Type:
Surface Mount
Series:
MDmesh™ II
Gate Charge (Qg) (Max) @ Vgs:
9.5 nC @ 10 V
Supplier Device Package:
PowerFlat™ (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
650mA (Ta), 2.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL3NM60
ECCN:
EAR99
Automotive Standard:
No
Maximum Power Dissipation Pd:
22W
Maximum Drain Source Voltage Vds:
600V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Series:
MDmesh II
Forward Voltage Vf:
1.6V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
9.5nC
Package Type:
PowerFLAT (3.3 x 3.3) HV
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
1.5Ω
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
2.2A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
8
