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STMicroelectronics STW75NF30

STW75NF30 STMicroelectronics
STW75NF30
STW75NF30
STMicroelectronics

Product Information

Category:
Power MOSFET
Dimensions:
15.75 x 5.15 x 20.15mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
5.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
300 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
164 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5930 pF@ 25 V
Length:
15.75mm
Pin Count:
3
Typical Turn-Off Delay Time:
141 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
320 W
Series:
STripFET F3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
20.15mm
Typical Turn-On Delay Time:
115 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
45 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
45mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
164 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
5930 pF @ 25 V
Mounting Type:
Through Hole
Series:
STripFET™
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
320W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW75N
ECCN:
EAR99
RoHs Compliant
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This is manufactured by STMicroelectronics. The manufacturer part number is STW75NF30. It is of power mosfet category . The given dimensions of the product include 15.75 x 5.15 x 20.15mm. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.15mm wide. The product offers single transistor configuration. It has a maximum of 300 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 164 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5930 pf@ 25 v . Its accurate length is 15.75mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 141 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 320 w maximum power dissipation. The product stripfet f3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.15mm. In addition, it has a typical 115 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 45 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 45mohm @ 30a, 10v. The maximum gate charge and given voltages include 164 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 300 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 5930 pf @ 25 v. The product stripfet™, is a highly preferred choice for users. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). The product carries maximum power dissipation 320w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw75n, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
pdf icon
N-channel 300 V, 0.037 Ω, 60 A, TO-247 low gate charge STripFET™2; Power MOSFET(Technical Reference)
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IPG/14/8545 24/Jun/2014(PCN Assembly/Origin)

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